This work investigates the ferroelectric properties of γ − In₂Se₃, a material that uniquely retains its spontaneous polarization at the nano-scale, making it resistant to depolarizing fields. With a direct band gap of 1.8 eV and the ability to switch between insulating and semiconducting phases at room temperature, γ − In₂Se₃ holds promise for next-gen memory devices, where its stable ferroelectricity could revolutionize data storage and processing.
