ICTS:29156

Video URL

CT- Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS2/2H-TaSe2/2H-MoS2 Heter…

CT- Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS2/2H-TaSe2/2H-MoS2 Heterostructure

(2024). CT- Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS2/2H-TaSe2/2H-MoS2 Heterostructure. SciVideos. https://youtu.be/7oNNI38zQPg

CT- Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS2/2H-TaSe2/2H-MoS2 Heterostructure. SciVideos, Jul. 21, 2024, https://youtu.be/7oNNI38zQPg 

          @misc{ scivideos_ICTS:29156,
            doi = {},
            url = {https://youtu.be/7oNNI38zQPg},
            author = {},
            keywords = {},
            language = {en},
            title = {CT- Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS2/2H-TaSe2/2H-MoS2 Heterostructure},
            publisher = {},
            year = {2024},
            month = {jul},
            note = {ICTS:29156 see, \url{https://scivideos.org/icts-tifr/29156}}
          }
Mehak Mahajan
Talk numberICTS:29156
Source RepositoryICTS-TIFR
Source EventEngineered 2D Quantum Materials
Collection

Abstract

1T-TaS2 exhibits several resistivity phases due to the modulation of charge density wave (CDW). The fact that such phase transition can be driven electrically has attracted a lot of attention in the recent past toward active-metal based electronics. However, the bias-driven resistivity switching is not very large (less than five-fold), and an enhancement in the same will highly impact such phase transition devices. One aspect that is often overlooked is that such phase transition is also accompanied by a significant change in the local temperature due to the low thermal conductivity of 1T-TaS2. In this work, such electrically driven phase transition induced temperature change is exploited to promote carriers over a thermionic barrier in a 1T-TaS2/2H-TaSe2/2H-MoS2 T-Junction, achieving a 964-fold abrupt switching in the current through the MoS2 channel. The device is highly reconfigurable and exhibits an abrupt reduction in current as well when the biasing configuration changes. The res...