Cs as a low-frequency RF field sensor


Rittenhouse, S. (2022). Cs as a low-frequency RF field sensor. Perimeter Institute for Theoretical Physics. https://pirsa.org/22070010


Rittenhouse, Seth. Cs as a low-frequency RF field sensor. Perimeter Institute for Theoretical Physics, Jul. 14, 2022, https://pirsa.org/22070010


          @misc{ scivideos_PIRSA:22070010,
            doi = {10.48660/22070010},
            url = {https://pirsa.org/22070010},
            author = {Rittenhouse, Seth},
            keywords = {Quantum Information},
            language = {en},
            title = {Cs as a low-frequency RF field sensor},
            publisher = {Perimeter Institute for Theoretical Physics},
            year = {2022},
            month = {jul},
            note = {PIRSA:22070010 see, \url{https://scivideos.org/pirsa/22070010}}

Seth Rittenhouse United States Naval Academy

Source RepositoryPIRSA
Talk Type Conference


"133Cs as a low-frequency RF field sensor Seth T. Rittenhouse,1 Seth Meiselman,2 Vanessa Ortiz,1 and Geoffrey A. Cranch2 1Department of Physics, the United States Naval Academy, Annapolis, MD 21402, USA 2Optical Sciences Division, U. S. Naval Research Laboratory, Washington, DC 20375, USA Do to the extreme sensitivity of Rydberg systems to external fields, there has been a great deal of interest in using them as high precision quantum mechanical sensors. However, for intermediate principle quantum numbers (n ∼ 20 − 40), using the AC Stark effect to measure the intensity ofan RF field is limited to amplitudes on the order of ERF ∼ 1 V/cm. In this poster we examine the feasibility of using 133Cs as a high precision, low frequency (10-100 MHz) RF field sensor. We propose using a DC field offset to increase the field sensitivity of the AC Stark spectrum to the intensity of the RF field. The presence of the DC offset field leads to sideband states with Rabbi frequencies that are highly sensitive to RF field intensity. Using electromagnetically induced transpareny, our initial theoretical modeling indicates that this approach might be used to create a RF field sensor with sub-millivolt per centimeter accuracy."